Title :
Pseudorandom pulsed I/V characterisation of MESFET/HEMT devices
Author :
Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
fDate :
6/8/2000 12:00:00 AM
Abstract :
A new automated system for observing the dependence of the frequency dispersion effect on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudorandom pulse I/V measurement system for observing the memory effect in these devices
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric current measurement; gallium arsenide; high electron mobility transistors; pulse measurement; semiconductor device measurement; GaAs; GaAs MESFET/HEMT devices; automated system; drain current; electric field dependence; frequency dispersion effect; memory effect; pseudorandom pulse I/V measurement system; pseudorandom pulsed I/V characterisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000783
