Title :
SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K
Author :
Zerounian, N. ; Aniel, F. ; Adde, R. ; Gruhle, A.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
6/8/2000 12:00:00 AM
Abstract :
An Si/Si0.65Ge0.35 abrupt heterojunction bipolar transistor with transit frequencies fT of 133 and 213 GHz at 300 and 77 K, respectively, is reported. The corresponding maximum oscillation frequencies fmax are 81 and 115 GHz. The fT of 213 GHz is the highest value yet reported for any silicon-based bipolar transistor. A detailed analysis of the intrinsic delay times reveals that the base transit time plays the dominant role
Keywords :
Ge-Si alloys; cryogenic electronics; delays; elemental semiconductors; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; silicon; 115 GHz; 133 GHz; 213 GHz; 300 K; 77 K; 81 GHz; Si-Si0.65Ge0.35; Si/Si0.65Ge0.35 abrupt heterojunction bipolar transistor; base transit time; intrinsic delay times; low temperature application; maximum oscillation frequencies; microwave measurements; mm-wave application; transit frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000764
