• DocumentCode
    1359380
  • Title

    SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K

  • Author

    Zerounian, N. ; Aniel, F. ; Adde, R. ; Gruhle, A.

  • Author_Institution
    Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
  • Volume
    36
  • Issue
    12
  • fYear
    2000
  • fDate
    6/8/2000 12:00:00 AM
  • Firstpage
    1076
  • Lastpage
    1078
  • Abstract
    An Si/Si0.65Ge0.35 abrupt heterojunction bipolar transistor with transit frequencies fT of 133 and 213 GHz at 300 and 77 K, respectively, is reported. The corresponding maximum oscillation frequencies fmax are 81 and 115 GHz. The fT of 213 GHz is the highest value yet reported for any silicon-based bipolar transistor. A detailed analysis of the intrinsic delay times reveals that the base transit time plays the dominant role
  • Keywords
    Ge-Si alloys; cryogenic electronics; delays; elemental semiconductors; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; silicon; 115 GHz; 133 GHz; 213 GHz; 300 K; 77 K; 81 GHz; Si-Si0.65Ge0.35; Si/Si0.65Ge0.35 abrupt heterojunction bipolar transistor; base transit time; intrinsic delay times; low temperature application; maximum oscillation frequencies; microwave measurements; mm-wave application; transit frequencies;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000764
  • Filename
    852212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359380