DocumentCode :
1359385
Title :
Bipolar Transistor Excess Phase Modeling in Verilog-A
Author :
McAndrew, Colin C. ; Huszka, Zoltan ; Coram, Geoffrey J.
Author_Institution :
Freescale Semicond., Tempe, AZ, USA
Volume :
44
Issue :
9
fYear :
2009
Firstpage :
2267
Lastpage :
2275
Abstract :
The collector current Ic of a bipolar transistor does not instantaneously respond to changes in applied base-emitter voltage Vbe ; its response exhibits a time lag because of the finite transit time of carriers through the transistor, which is manifest as a phase lag (or ldquoexcess phaserdquo) in the frequency domain. In this paper we present an excess phase model that has a constant magnitude response, in contrast to previous models which introduce a change in magnitude as well as in phase, and detail how our model can be implemented in Verilog-A. In addition, we show how a bias dependence of the time lag can be added to the Verilog-A implementation of the Weil-McNamee excess phase model without introducing undesired behavior.
Keywords :
bipolar transistors; electronic engineering computing; hardware description languages; Verilog-A; Weil-McNamee excess phase model; base-emitter voltage; bipolar transistor excess phase modeling; collector current; constant magnitude response; finite transit time; frequency domain; phase lag; time lag; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit simulation; Delay effects; Frequency domain analysis; Hardware design languages; Integrated circuit technology; Semiconductor device modeling; Voltage; Bipolar transistors; SPICE; circuit simulation; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2009.2022667
Filename :
5226778
Link To Document :
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