• DocumentCode
    1359385
  • Title

    Bipolar Transistor Excess Phase Modeling in Verilog-A

  • Author

    McAndrew, Colin C. ; Huszka, Zoltan ; Coram, Geoffrey J.

  • Author_Institution
    Freescale Semicond., Tempe, AZ, USA
  • Volume
    44
  • Issue
    9
  • fYear
    2009
  • Firstpage
    2267
  • Lastpage
    2275
  • Abstract
    The collector current Ic of a bipolar transistor does not instantaneously respond to changes in applied base-emitter voltage Vbe ; its response exhibits a time lag because of the finite transit time of carriers through the transistor, which is manifest as a phase lag (or ldquoexcess phaserdquo) in the frequency domain. In this paper we present an excess phase model that has a constant magnitude response, in contrast to previous models which introduce a change in magnitude as well as in phase, and detail how our model can be implemented in Verilog-A. In addition, we show how a bias dependence of the time lag can be added to the Verilog-A implementation of the Weil-McNamee excess phase model without introducing undesired behavior.
  • Keywords
    bipolar transistors; electronic engineering computing; hardware description languages; Verilog-A; Weil-McNamee excess phase model; base-emitter voltage; bipolar transistor excess phase modeling; collector current; constant magnitude response; finite transit time; frequency domain; phase lag; time lag; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit simulation; Delay effects; Frequency domain analysis; Hardware design languages; Integrated circuit technology; Semiconductor device modeling; Voltage; Bipolar transistors; SPICE; circuit simulation; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2009.2022667
  • Filename
    5226778