Title :
The Sensing Mechanism and the Response Simulation of the MIS Hydrogen Sensor
Author :
Zhang, Linfeng ; McCullen, Erik ; Rimai, Lajos ; Naik, Ratna ; Auner, Gregory W. ; Ng, K. Y Simon
Author_Institution :
Dept. of Electr. Eng., Univ. of Bridgeport, Bridgeport, CT, USA
Abstract :
The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studied. The chemical state of palladium in Pd and Pd alloy gated devices is similar and Pd alloy devices show a wide dynamic range. According to the hydrogen induced capacitance-voltage ( CV) shift and the response from a refreshed sensor, a new sensing mechanism is proposed that the hydrogen response is due to the protons on the metal/insulator interface and some of the protons take a long time to be desorbed from the interface. Based on this mechanism, a one-dimensional model is constructed with the consideration of the series resistance and fixed positive charges to simulate the CV/GV curves and hydrogen response from the Pd-Cr gated device.
Keywords :
MIS devices; gas sensors; hydrogen; palladium alloys; MIS hydrogen sensor; Pd; capacitance-voltage shift; metal-insulator-semiconductor hydrogen sensors; response simulation; sensing mechanism; Capacitive sensors; Chemical elements; Chemical sensors; Dynamic range; Hydrogen; Magnetic sensors; Metal-insulator structures; Palladium; Protons; Sensor phenomena and characterization; Chromium; hydrogen; metal-insulator-semiconductor (MIS); nickel; palladium; sensor;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2009.2029450
