Title :
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Author :
Seabaugh, Alan C. ; Zhang, Qin
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.
Keywords :
CMOS logic circuits; MOSFET; low-power electronics; tunnel transistors; MOSFET; beyond CMOS logic; interband tunneling; low-voltage tunnel transistors; metal-oxide-semiconductor field-effect transistor; steep subthreshold swing transistors; tunnel field-effect transistors; CMOS integrated circuits; Junctions; Logic gates; MOSFET circuits; Subthreshold current; Transistors; Tunneling; Subthreshold swing; tunneling; tunneling transistor;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2010.2070470
