SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

Author

Muller, Alexandru ; Neculoiu, Dan ; Konstantinidis, George ; Deligeorgis, George ; Dinescu, Adrian ; Stavrinidis, Antonis ; Cismaru, Alina ; Dragoman, Mircea ; Stefanescu, Alexandra

Author_Institution

IMT, Bucharest, Romania

Volume

31

Issue

12

fYear

2010

Firstpage

1398

Lastpage

1400

Abstract

This letter describes the manufacture and characterization of surface acoustic wave (SAW) devices on GaN/Si devoted to applications above the 5-GHz frequency range. The SAW structures consist of two face-to-face interdigitated transducers (IDTs), placed at different distances. Using a TiAu metallization, 80-nm-thick and advanced e-beam lithographical techniques with IDTs with fingers and spacings 200 nm wide have been obtained on the GaN layer. On wafer measurement of the S parameters have demonstrated the operation at approximately 5.6 GHz. The frequency response of the devices is explained in detail.

Keywords

III-V semiconductors; S-parameters; electron beam lithography; elemental semiconductors; frequency response; gallium compounds; interdigital transducers; metallisation; silicon; surface acoustic wave devices; wide band gap semiconductors; GaN-Si; S parameters; SAW devices; e-beam lithographical techniques; face-to-face interdigitated transducers; frequency response; metallization; surface acoustic wave; wafer measurement; Gallium nitride; Microwave measurements; Nanolithography; Resonant frequency; Surface acoustic wave devices; Surface acoustic waves; E-beam nanolithography; interdigitated transducers (IDTs); surface acoustic wave (SAW);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2078484

Filename

5608488