DocumentCode
1359597
Title
Filtered cathodic vacuum arc deposition of copper thin film
Author
Shi, J.R. ; Lau, S.P. ; Sun, Z. ; Shi, X. ; Tay, B.K. ; Tan, H.S.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume
36
Issue
14
fYear
2000
fDate
7/6/2000 12:00:00 AM
Firstpage
1205
Lastpage
1207
Abstract
Copper thin films with low electrical resistivity were successfully deposited using a filtered cathodic vacuum arc technique at room temperature. It was found that there is a critical film thickness of ~135 nm, above which the resistivity has an almost unchanged value of 1.8 μΩcm. Below the critical thickness, the resistivity increases with decreasing thickness and is correlated with the copper grain size measured by AFM and X-ray diffraction
Keywords
ULSI; X-ray diffraction; atomic force microscopy; copper; grain size; integrated circuit interconnections; vacuum deposition; 1.8 muohmcm; 135 nm; AFM; Cu; IC interconnections; ULSI; X-ray diffraction; critical film thickness; electrical resistivity; filtered cathodic vacuum arc deposition; grain size;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000861
Filename
852243
Link To Document