Title :
Time-domain macromodel for lossy VLSI interconnects
Author :
Cappuccino, G. ; Cocorullo, G.
Author_Institution :
Dept. of Electron. Comput. Sci. & Syst., Calabria Univ., Italy
fDate :
7/6/2000 12:00:00 AM
Abstract :
A new time-domain model that enables loss effects on the input impedance of on-chip transmission lines during switching transients to be accurately taken into account is presented. The model has been specifically developed for use in conjunction with MOS macromodels to predict the electrical behaviour of matched CMOS buffers. It solves the problem of mixed frequency/time domain analysis by replacing the lines with a lumped time-varying resistor
Keywords :
CMOS integrated circuits; VLSI; integrated circuit interconnections; integrated circuit modelling; time-domain analysis; transient analysis; MOS macromodels; input impedance; loss effects; lossy VLSI interconnects; lumped time-varying resistor; matched CMOS buffers; mixed frequency/time domain analysis; on-chip transmission lines; switching transients; time-domain macromodel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000883
