Title :
GaInAsN/GaAs laser diodes operating at 1.52 μm
Author :
Fischer, M. ; Reinhardt, M. ; Forchel, A.
Author_Institution :
Inst. fur Tech. Phys., Wurzburg Univ., Germany
fDate :
7/6/2000 12:00:00 AM
Abstract :
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 μm range based on GaAs
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1.52 mum; 1517 nm; 298 K; GaAs; GaInAsN-GaAs; GaInAsN/GaAs laser diodes; double quantum well lasers; ridge waveguide laser diode; room-temperature laser emission; room-temperature pulsed operation; solid source molecular beam epitaxy; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000870
