DocumentCode :
1359703
Title :
Modeling the Negative Quadratic VCC of 
in MIM Capacitor
Author :
Phung, Thanh Hoa ; Steinmann, Philipp ; Wise, Rick ; Yeo, Yee-Chia ; Zhu, Chunxiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Volume :
32
Issue :
12
fYear :
2011
Firstpage :
1671
Lastpage :
1673
Abstract :
The electrical performance of metal-insulator-metal capacitors with thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400 reduced substantially. An equation based on the orientation polarization of the dipole moments in was derived, which fits the measured normalized capacitance density versus voltage across very well. This suggests that the negative quadratic VCC of is due to the orientation polarization.
Keywords :
MIS capacitors; semiconductor materials; silicon compounds; MIM capacitor; SiO2; VCC; dipole moments; distance 3 nm to 13 nm; metal-insulator- metal capacitors; negative quadratic VCC; orientation polarization; Capacitance; Capacitors; Dielectric constant; MIM capacitors; Niobium; Permittivity; $hbox{SiO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2169038
Filename :
6059474
Link To Document :
