DocumentCode
1359703
Title
Modeling the Negative Quadratic VCC of
in MIM Capacitor
Author
Phung, Thanh Hoa ; Steinmann, Philipp ; Wise, Rick ; Yeo, Yee-Chia ; Zhu, Chunxiang
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Volume
32
Issue
12
fYear
2011
Firstpage
1671
Lastpage
1673
Abstract
The electrical performance of metal-insulator-metal capacitors with thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400 reduced substantially. An equation based on the orientation polarization of the dipole moments in was derived, which fits the measured normalized capacitance density versus voltage across very well. This suggests that the negative quadratic VCC of is due to the orientation polarization.
Keywords
MIS capacitors; semiconductor materials; silicon compounds; MIM capacitor; SiO2; VCC; dipole moments; distance 3 nm to 13 nm; metal-insulator- metal capacitors; negative quadratic VCC; orientation polarization; Capacitance; Capacitors; Dielectric constant; MIM capacitors; Niobium; Permittivity; $hbox{SiO}_{2}$ ; MIM capacitor; negative quadratic VCC; orientation polarization; voltage coefficients of capacitance (VCC);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2169038
Filename
6059474
Link To Document