• DocumentCode
    1359703
  • Title

    Modeling the Negative Quadratic VCC of \\hbox {SiO}_{2} in MIM Capacitor

  • Author

    Phung, Thanh Hoa ; Steinmann, Philipp ; Wise, Rick ; Yeo, Yee-Chia ; Zhu, Chunxiang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • Volume
    32
  • Issue
    12
  • fYear
    2011
  • Firstpage
    1671
  • Lastpage
    1673
  • Abstract
    The electrical performance of metal-insulator-metal capacitors with thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400 reduced substantially. An equation based on the orientation polarization of the dipole moments in was derived, which fits the measured normalized capacitance density versus voltage across very well. This suggests that the negative quadratic VCC of is due to the orientation polarization.
  • Keywords
    MIS capacitors; semiconductor materials; silicon compounds; MIM capacitor; SiO2; VCC; dipole moments; distance 3 nm to 13 nm; metal-insulator- metal capacitors; negative quadratic VCC; orientation polarization; Capacitance; Capacitors; Dielectric constant; MIM capacitors; Niobium; Permittivity; $hbox{SiO}_{2}$; MIM capacitor; negative quadratic VCC; orientation polarization; voltage coefficients of capacitance (VCC);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2169038
  • Filename
    6059474