• DocumentCode
    1359712
  • Title

    New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High- k /Metal-Gate nMOSFETs

  • Author

    Sagong, Hyun Chul ; Kang, Chang Yong ; Sohn, Chang-Woo ; Choi, Do-Young ; Jeong, Eui-Young ; Baek, Chang-Ki ; Lee, Jeong-Soo ; Jeong, Yoon-Ha

  • Author_Institution
    Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
  • Volume
    32
  • Issue
    12
  • fYear
    2011
  • Firstpage
    1668
  • Lastpage
    1670
  • Abstract
    The hot-carrier (HC) effect in high-k/metal-gate nMOSFETs is characterized using radio-frequency (RF) small-signal parameter analysis. To explain a novel HC degradation of RF small-signal parameters, we propose a modified surface channel resistance model that can be applied to not only conventional SiO2/poly-Si-gate nMOSFETs but also high-k/metal-gate nMOSFETs.
  • Keywords
    MOSFET; high-k dielectric thin films; hot carriers; radiofrequency measurement; surface resistance; HC degradation; HC effect; RF small-signal parameters; conventional nMOSFET; high k-nMOSFET; hot-carrier degradation; hot-carrier effect; metal-gate nMOSFET; modified surface channel resistance model; radio-frequency small-signal parameter analysis; Capacitance; Degradation; High K dielectric materials; Logic gates; MOSFETs; Radio frequency; Resistance; High-$k$; hot carriers (HCs); radio frequency (RF); reliability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2169039
  • Filename
    6059475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359712