Title :
AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz
Author :
Vescan, A. ; Dietrich, R. ; Wieszt, A. ; Schurt, A. ; Leier, H. ; Piner, E.L. ; Redwing, J.M.
Author_Institution :
Res. & Technol., DaimlerChrysler AG, Ulm, Germany
fDate :
7/6/2000 12:00:00 AM
Abstract :
The power performance of AlGaN/GaN MODFETs grown on semi-insulating SiC is reported. The epitaxial layers were grown by MOCVD with a good uniformity and excellent carrier mobility of 1300 cm 2/Vs at room temperature. Devices with gate length of 0.3 μm were fabricated and characterised, yielding a record transconductance of 300 mS/mm. Active load-pull measurements yielded 594 mW total output power at 20 GHz. At 15 GHz a total output power of 3.3 W was measured. To the authors´ knowledge, these results represent the highest output power so far achieved from a single GaN-device at Ku and K-band
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 0.3 mum; 15 GHz; 20 C; 20 GHz; 3.3 W; 300 mS/mm; 594 mW; AlGaN-GaN; AlGaN/GaN MODFETs; K-band; Ku-band; MOCVD; SiC; active load-pull measurements; carrier mobility; epitaxial layers; gate length; power performance; room temperature; semi-insulating SiC; total output power; transconductance; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000898
