Complex current gain and cutoff frequency determination of HBTs

Author

Zerounian, N. ; Aniel, F. ; Adde, R.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France

Volume

36

Issue

14

fYear

2000

fDate

7/6/2000 12:00:00 AM

Firstpage

1236

Lastpage

1237

Abstract

The behaviour of the modulus and phase Φ(h_2l) of the complex current gain h_2l of high frequency heterojunction bipolar transistors (HBTs) has been investigated using an InGaAs/InAlAs/InP HBT, and compared with the behaviour predicted by a one pole/one zero analytical expression for h₂₁ It is demonstrated that the phase value Φ(h_2l)=-90° reliably locates the frequency range in which (h_2l) frequency fall-off reaches -20 dB/dec, the criterion for determining f_T. An analytical fit of the measured gain frequency product GF centred within this frequency range provides a reproducible and fully automated determination of f_T

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor device models; HBTs; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HBT; complex current gain; cutoff frequency; frequency fall-off; gain frequency product; high frequency heterojunction bipolar transistors; modulus; one pole/one zero analytical expression; phase;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000875

Filename

852263