• DocumentCode
    1359737
  • Title

    Direct evidence for defect conduction at interface between gallium nitride and sapphire

  • Author

    Ansell, B.J. ; Harrison, L. ; Foxon, C.T. ; Harris, J.J. ; Cheng, T.S.

  • Author_Institution
    Dept. of Phys., Nottingham Univ., UK
  • Volume
    36
  • Issue
    14
  • fYear
    2000
  • fDate
    7/6/2000 12:00:00 AM
  • Firstpage
    1237
  • Lastpage
    1239
  • Abstract
    The mobility and carrier concentration carrier depth profiles have been measured for a GaN epilayer grown by plasma-assisted MBE. The results show that the apparent carrier concentration increases at the interface whilst the apparent mobility decreases. A two-layer model can be used to explain this behaviour
  • Keywords
    III-V semiconductors; carrier density; carrier mobility; gallium compounds; sapphire; semiconductor epitaxial layers; semiconductor-insulator boundaries; wide band gap semiconductors; GaN epilayer; GaN-Al2O3; carrier concentration; carrier depth profiles; defect conduction; gallium nitride; interface; mobility; plasma-assisted MBE; sapphire; two-layer model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000902
  • Filename
    852264
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359737