Title :
Direct evidence for defect conduction at interface between gallium nitride and sapphire
Author :
Ansell, B.J. ; Harrison, L. ; Foxon, C.T. ; Harris, J.J. ; Cheng, T.S.
Author_Institution :
Dept. of Phys., Nottingham Univ., UK
fDate :
7/6/2000 12:00:00 AM
Abstract :
The mobility and carrier concentration carrier depth profiles have been measured for a GaN epilayer grown by plasma-assisted MBE. The results show that the apparent carrier concentration increases at the interface whilst the apparent mobility decreases. A two-layer model can be used to explain this behaviour
Keywords :
III-V semiconductors; carrier density; carrier mobility; gallium compounds; sapphire; semiconductor epitaxial layers; semiconductor-insulator boundaries; wide band gap semiconductors; GaN epilayer; GaN-Al2O3; carrier concentration; carrier depth profiles; defect conduction; gallium nitride; interface; mobility; plasma-assisted MBE; sapphire; two-layer model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000902
