DocumentCode
1359753
Title
High voltage SiC diodes with small recovery time
Author
Levinshtein, M.E. ; Mnatsakanov, T.T. ; Ivanov, P.A. ; Palmour, J.W. ; Rumyantsev, S.L. ; Singh, R. ; Yurkov, S.N.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
36
Issue
14
fYear
2000
fDate
7/6/2000 12:00:00 AM
Firstpage
1241
Lastpage
1242
Abstract
4H-SiC diodes with 6 kV blocking capability. Low forward voltage drop (4.2 V at 100 A/cm2, 5.8 V at 500 A/cm2), and very small recovery time (⩽7 ns) have been demonstrated for the first time. Experimental results can be explained by the combination of high lifetime across the major part of the base and the presence near the metallurgical boundary of the p+n junction of a thin layer with a very small carrier lifetime
Keywords
carrier lifetime; power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 4.2 V; 4H-SiC diodes; 5.8 V; 6 kV; 7 ns; SiC; blocking capability; high lifetime; high voltage SiC diodes; low forward voltage drop; metallurgical boundary; p+n junction; small carrier lifetime; small recovery time;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000849
Filename
852266
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