• DocumentCode
    1359758
  • Title

    Radial confinement: concept for lateral power devices

  • Author

    Krishnan, S. ; Souza, M. M Dc ; Narayanan, E.M.S. ; Vellvehi, Miquel ; Flores, D. ; Rebollo, J. ; Millan, J.

  • Author_Institution
    Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
  • Volume
    36
  • Issue
    14
  • fYear
    2000
  • fDate
    7/6/2000 12:00:00 AM
  • Firstpage
    1242
  • Lastpage
    1244
  • Abstract
    A novel, radial confinement approach is proposed for lateral power devices on silicon on sapphire technology. The key feature is the decrease in the drift region width from the anode to cathode to achieve charge confinement to achieve higher n-drift concentration than in a conventional device
  • Keywords
    elemental semiconductors; p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon; silicon-on-insulator; SOS; Si-Al2O3; anode; cathode; charge confinement; drift region width; lateral power devices; n-drift concentration; pin diodes; radial confinement; silicon on sapphire technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000894
  • Filename
    852267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359758