• DocumentCode
    1359792
  • Title

    A 40 nm 222 mW H.264 Full-HD Decoding, 25 Power Domains, 14-Core Application Processor With x512b Stacked DRAM

  • Author

    Kikuchi, Yu ; Takahashi, Makoto ; Maeda, Tomohisa ; Fukuda, Masatoshi ; Koshio, Yasuhiro ; Hara, Hiroyuki ; Arakida, Hideho ; Yamamoto, Hideaki ; Hagiwara, Yousuke ; Fujita, Tetsuya ; Watanabe, Manabu ; Ezawa, Hirokazu ; Shimazawa, Takayoshi ; Ohara, Yasu

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    46
  • Issue
    1
  • fYear
    2011
  • Firstpage
    32
  • Lastpage
    41
  • Abstract
    In this paper we introduce a 14-core application processor for multimedia mobile applications, implemented in 40 nm, with a 222 mW H.264 full high-definition (full-HD) video engine, a 124 mW 40 M-polygons/s 3D/2D graphics engine, and a video/audio multiprocessor for various Codecs and image processing. The application processor has 25 power domains to achieve coarse-grain power gating for adjusting to the required performance of wide range of multimedia applications. The simple on-chip power switch circuits perform less than 1 μs switching while reducing rush current. Furthermore, the Stacked Chip SoC (SCS) technology enables rewiring to the DRAM chip during assembly/packaging phase using a wire with 10 μm minimum pitch on Re-Distribution Layer (RDL) using electroplating. The peak memory bandwidth is 10.6 GB/s with an x512b SCS-DRAM interface, and the power consumption of this interface is 3.9 mW at 2.4 GB/s workload.
  • Keywords
    DRAM chips; codecs; multimedia systems; multiprocessing systems; system-on-chip; video coding; 3D/2D graphics engine; H.264; codecs; full-HD decoding; image processing; multimedia mobile applications; power 222 mW; power 3.9 mW; size 40 nm; stacked DRAM; stacked chip SoC; video engine; video/audio multiprocessor; Codecs; Engines; Memory management; Multimedia communication; Power demand; Wire; Wiring; Application processor; MICRO bump; Re-Distribution Layer (RDL); full high-definition (full-HD) video; multiple power domains; on-chip LV-PMOS switch; stacked DRAM;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2010.2079370
  • Filename
    5608523