Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power

Author

Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Chen, Jiann-Jong ; Belenky, G.

Author_Institution

State Univ. of New York at Stony Brook, Stony Brook, NY, USA

Volume

45

Issue

18

fYear

2009

Firstpage

942

Lastpage

943

Abstract

Type-I double-quantum-well GaSb-based diode lasers operating at 3 mum with room-temperature continuous-wave output power above 300 mW and peak power-conversion efficiency near 8 were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100 A/cm² per quantum-well and slope efficiency of 100 mW/A were demonstrated at 17degC.

Keywords

aluminium alloys; arsenic alloys; current density; gallium alloys; indium alloys; quantum well lasers; semiconductor lasers; AlGaInAsSb; continuous-wave output power; continuous-wave threshold current density; double-quantum-well diode laser; hole confinement; laser heterostructure; modal differential gain maximization; peak power-conversion efficiency; power 300 mW; temperature 17 degC; temperature 293 K to 298 K; waveguide thickness; wavelength 3 mum;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2009.1827

Filename

5227001