Title :
Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power
Author :
Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Chen, Jiann-Jong ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
Type-I double-quantum-well GaSb-based diode lasers operating at 3 mum with room-temperature continuous-wave output power above 300 mW and peak power-conversion efficiency near 8 were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100 A/cm2 per quantum-well and slope efficiency of 100 mW/A were demonstrated at 17degC.
Keywords :
aluminium alloys; arsenic alloys; current density; gallium alloys; indium alloys; quantum well lasers; semiconductor lasers; AlGaInAsSb; continuous-wave output power; continuous-wave threshold current density; double-quantum-well diode laser; hole confinement; laser heterostructure; modal differential gain maximization; peak power-conversion efficiency; power 300 mW; temperature 17 degC; temperature 293 K to 298 K; waveguide thickness; wavelength 3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1827
