Effects of 3H etchant on InSb A and B sides for array fabrication

The different etching conditions of In face and Sb face of an InSb semiconductor by (HF:H₂O₂:H₂O, 1:1:4) referred to as (3H) for the fabrication of the IR:FPA array based on mesa etching are presented. Results indicate that lateral etching on the Sb face is considerably less than on In face and so is more appropriate for this application.