• DocumentCode
    1359991
  • Title

    Effects of 3H etchant on InSb A and B sides for array fabrication

  • Author

    Daraee, M. ; Moradi, Mehdi ; Hajian, Masood ; Rastgoo, M. ; Forghani, M.A.

  • Author_Institution
    Semicond. Component Ind. (SCI), Tehran, Iran
  • Volume
    45
  • Issue
    18
  • fYear
    2009
  • Firstpage
    957
  • Lastpage
    958
  • Abstract
    The different etching conditions of In face and Sb face of an InSb semiconductor by (HF:H2O2:H2O, 1:1:4) referred to as (3H) for the fabrication of the IR:FPA array based on mesa etching are presented. Results indicate that lateral etching on the Sb face is considerably less than on In face and so is more appropriate for this application.
  • Keywords
    III-V semiconductors; etching; focal planes; indium compounds; infrared detectors; optical fabrication; 3H etchant; IR:FPA array fabrication; InSb; infrared detectors; lateral etching; mesa etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0969
  • Filename
    5227011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359991