17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier

Author

Xiaozhuo Wang ; Erbert, Gotz ; Wenzel, Hans ; Crump, P. ; Eppich, B. ; Knigge, S. ; Ressel, P. ; Ginolas, A. ; Maassdorf, Andre ; Trankle, Gunther

Author_Institution

Ferdinand-Braun-Inst., Leibniz-Inst. Fur Hochstfrequenztechnik, Berlin, Germany

Volume

25

Issue

2

fYear

2013

fDate

Jan.15, 2013

Firstpage

115

Lastpage

118

Abstract

High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in a master-oscillator power amplifier-system. We compare the influence of lateral geometric design on amplifier performance, by using devices with super large optical waveguide (4.8 μm) and relative low confinement factor (Γ = 1%) . We find that the use of an amplifier with a larger active region results in both high power and high beam quality. An abandonment of cavity spoiling grooves leads to strongly improved beam characteristics.

Keywords

diffraction gratings; laser cavity resonators; semiconductor optical amplifiers; waveguide lasers; cavity spoiling grooves; high-power high-beam quality narrow-stable spectra; lateral geometric design; master-oscillator power amplifier-system; near-diffraction-limited output; optical waveguide; power 17 W; relative-low-confinement factor; truncated-tapered-semiconductor optical amplifier; wavelength 4.8 mum; wavelength 970 nm; Laser beams; Measurement by laser beam; Optical diffraction; Optical pulses; Power generation; Semiconductor lasers; Ultrafast optics; High power; lateral structure; near-diffraction-limited beam quality; semiconductor optical amplifier;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2228185

Filename

6407161