Title :
Modified Gummel-Poon model for susceptibility prediction
Author :
Fiori, Franco ; Pozzolo, Vincenzo
Author_Institution :
Microwave Electron. Group, Politecnico di Torino, Italy
fDate :
5/1/2000 12:00:00 AM
Abstract :
This paper describes a new model of the bipolar transistor by which the effects of RF interference on the DC quiescent operating point upset can be computed. It is an improvement of the Gummel-Poon (GP) model used in circuit simulators like SPICE in the sense that it takes into account distributed phenomena excited by RF interference like the DC and AC crowding of the emitter current in the base region. The model, implemented in SPICE, has been experimentally validated and its efficiency has been demonstrated. The model does not require more measurements then those necessary to extract the parameters of the conventional GP model
Keywords :
SPICE; bipolar transistors; radiofrequency interference; semiconductor device models; AC crowding; DC crowding; DC quiescent operating point; RF interference effects; SPICE; base region; bipolar transistor; circuit simulators; distributed phenomena; efficiency; emitter current; experiment; measurements; modified Gummel-Poon model; susceptibility prediction; Bipolar transistors; Circuit simulation; Computational modeling; Electromagnetic interference; Equations; Nonlinear circuits; Predictive models; Radio frequency; SPICE; Voltage;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
