Modified Gummel-Poon model for susceptibility prediction

Author

Fiori, Franco ; Pozzolo, Vincenzo

Author_Institution

Microwave Electron. Group, Politecnico di Torino, Italy

Volume

42

Issue

2

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

206

Lastpage

213

Abstract

This paper describes a new model of the bipolar transistor by which the effects of RF interference on the DC quiescent operating point upset can be computed. It is an improvement of the Gummel-Poon (GP) model used in circuit simulators like SPICE in the sense that it takes into account distributed phenomena excited by RF interference like the DC and AC crowding of the emitter current in the base region. The model, implemented in SPICE, has been experimentally validated and its efficiency has been demonstrated. The model does not require more measurements then those necessary to extract the parameters of the conventional GP model

Keywords

SPICE; bipolar transistors; radiofrequency interference; semiconductor device models; AC crowding; DC crowding; DC quiescent operating point; RF interference effects; SPICE; base region; bipolar transistor; circuit simulators; distributed phenomena; efficiency; emitter current; experiment; measurements; modified Gummel-Poon model; susceptibility prediction; Bipolar transistors; Circuit simulation; Computational modeling; Electromagnetic interference; Equations; Nonlinear circuits; Predictive models; Radio frequency; SPICE; Voltage;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/15.852414

Filename

852414