DocumentCode
1360392
Title
Piezoresistive Cantilever Performance—Part II: Optimization
Author
Park, Sung-Jin ; Doll, Joseph C. ; Rastegar, Ali J. ; Pruitt, Beth L.
Author_Institution
Dept. of Mech. Eng., Stanford Univ., Stanford, CA, USA
Volume
19
Issue
1
fYear
2010
Firstpage
149
Lastpage
161
Abstract
Piezoresistive silicon cantilevers fabricated by ion implantation are frequently used for force, displacement, and chemical sensors due to their low cost and electronic readout. However, the design of piezoresistive cantilevers is not a straightforward problem due to coupling between the design parameters, constraints, process conditions, and performance. We systematically analyzed the effect of design and process parameters on force resolution and then developed an optimization approach to improve force resolution while satisfying various design constraints using simulation results. The combined simulation and optimization approach is extensible to other doping methods beyond ion implantation in principle. The optimization results were validated by fabricating cantilevers with the optimized conditions and characterizing their performance. The measurement results demonstrate that the analytical model accurately predicts force and displacement resolution, and sensitivity and noise tradeoff in optimal cantilever performance. We also performed a comparison between our optimization technique and existing models and demonstrated eight times improvement in force resolution over simplified models.
Keywords
cantilevers; piezoresistive devices; semiconductor doping; silicon; Si; displacement resolution; doping methods; force resolution; ion implantation; piezoresistive cantilever optimization; Force sensor; optimization; piezoresistance; piezoresistive cantilever;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2009.2036582
Filename
5356210
Link To Document