DocumentCode
1360446
Title
Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs
Author
Tettamanzi, Giuseppe C. ; Paul, Abhijeet ; Lansbergen, Gabriel P. ; Verduijn, Jan ; Lee, Sunhee ; Collaert, Nadine ; Biesemans, Serge ; Klimeck, Gerhard ; Rogge, Sven
Author_Institution
Kavli Inst. of Nanosci., Delft Univ. of Technol., Delft, Netherlands
Volume
31
Issue
2
fYear
2010
Firstpage
150
Lastpage
152
Abstract
Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.
Keywords
MOSFET; thermionic emission; tight-binding calculations; active cross-sectional area; barrier height; gate voltage; nFinFET; thermally activated subthreshold transport; thermionic emission; tight-binding simulations; triple-gate MOSFET; FinFET; thermionic emission; tight binding (TB);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2036134
Filename
5356217
Link To Document