• DocumentCode
    1360449
  • Title

    Solid stats III. Discrete devices: Advances in extending performance of power MOS field-effect transistors promise to extend their usefulness¿

  • Author

    Fogenbaum, J.

  • Volume
    18
  • Issue
    1
  • fYear
    1981
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    For pt.II see ibid., vol.18, no.1, p.62-3 (1981). Discusses advances in extending the performance of power MOS field effect transistors which will extend their usefulness, particularly in relation to integration with transducers.
  • Keywords
    insulated gate field effect transistors; power transistors; MOSFET; power MOS field effect transistors; Conductors; MOSFETs; Resistance; Sensors; Substrates; Switches; Transducers;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1981.6369542
  • Filename
    6369542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1360449