DocumentCode :
1360499
Title :
Demonstration of a 1024 
1024 Pixel InAs–GaSb Superlattice Focal Plane Array
Author :
Gunapala, S.D. ; Ting, D.Z. ; Hill, C.J. ; Nguyen, J. ; Soibel, A. ; Rafol, S.B. ; Keo, S.A. ; Mumolo, J.M. ; Lee, M.C. ; Liu, J.K. ; Yang, B.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
22
Issue :
24
fYear :
2010
Firstpage :
1856
Lastpage :
1858
Abstract :
We describe the demonstration of a 1024 × 1024 pixel long-wavelength infrared focal plane array based on an InAs-GaSb superlattice absorber surrounded by an electron-blocking and a hole-blocking unipolar barrier. An 11.5-μm cutoff focal plane without antireflection coating based on this complementary barrier infrared detector design has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and f/2 cold-stop.
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; optical noise; semiconductor superlattices; InAs-GaAs; antireflection coating; complementary barrier infrared detector design; electron-blocking unipolar barrier; hole-blocking unipolar barrier; long-wavelength infrared focal plane array; noise equivalent differential temperature; superlattice absorber; temperature 300 K; temperature 80 K; Dark current; Detectors; Infrared detectors; Quantum wells; Superlattices; Temperature measurement; Infrared detectors; infrared imaging; quantum-well devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2089677
Filename :
5609186
Link To Document :
