Title :
Computer: Contiguous-element memories increase storage tenfold: An overlapping-triangle configuration for bubble memories may displace permalloy-chevron types
Author :
Lin, Y.S. ; Sanders, I.L.
Author_Institution :
IBM Corp., San Jose, CA, USA
Abstract :
A new generation of contiguous-element magnetic-bubble devices can store about 10 times more information than permalloy chevron magnetic-bubble devices and yet be made by standard photolithographic technology. Devices in development have a storage density of 4 million bits per square centimeter.
Keywords :
magnetic bubble memories; 4 million bits per square centimeter; contiguous-element magnetic-bubble devices; memories; photolithographic technology; Conductors; Garnets; Generators; Logic gates; Magnetic recording; Magnetic separation; Magnetization;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1981.6369575
