• DocumentCode
    1360897
  • Title

    Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

  • Author

    Jung, Jong-wan ; Roh, Jae-Sung ; Lee, Youngjong ; Lee, Kyungho

  • Author_Institution
    Hyundai Electron. Ind. Co. Ltd., Cheongju, South Korea
  • Volume
    21
  • Issue
    8
  • fYear
    2000
  • Firstpage
    376
  • Lastpage
    377
  • Abstract
    We examined the effects of source/drain annealing condition on the gate sheet resistance and short channel effect. We found that two-step rapid thermal annealing (TS-RTA) technology, where 700/spl deg/C, 3 min pre-annealing in O/sub 2/ is introduced before 1000/spl deg/C anneal in N/sub 2/, suppressed dopant out-diffusion without degrading short channel effect of transistor.
  • Keywords
    MOSFET; diffusion; doping profiles; rapid thermal annealing; 1000 degC; 3 min; 700 degC; MOSFETs; N/sub 2/; O/sub 2/; dopant out-diffusion; gate sheet resistance; short channel effect; source/drain annealing condition; two-step rapid thermal annealing; Boron; Dielectric devices; Dielectric films; MOSFET circuits; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature; Thermal degradation; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.852955
  • Filename
    852955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1360897