Title :
Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor
Author :
Jung, Jong-wan ; Roh, Jae-Sung ; Lee, Youngjong ; Lee, Kyungho
Author_Institution :
Hyundai Electron. Ind. Co. Ltd., Cheongju, South Korea
Abstract :
We examined the effects of source/drain annealing condition on the gate sheet resistance and short channel effect. We found that two-step rapid thermal annealing (TS-RTA) technology, where 700/spl deg/C, 3 min pre-annealing in O/sub 2/ is introduced before 1000/spl deg/C anneal in N/sub 2/, suppressed dopant out-diffusion without degrading short channel effect of transistor.
Keywords :
MOSFET; diffusion; doping profiles; rapid thermal annealing; 1000 degC; 3 min; 700 degC; MOSFETs; N/sub 2/; O/sub 2/; dopant out-diffusion; gate sheet resistance; short channel effect; source/drain annealing condition; two-step rapid thermal annealing; Boron; Dielectric devices; Dielectric films; MOSFET circuits; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature; Thermal degradation; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
