Title :
Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors
Author :
Hong, Cheong Min ; Wagner, Sigurd
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mask for back-channel etch. Laser printed toner was used for all other mask levels in a photoresist-free fabrication process. The inkjet printing of copper contacts represents a further step toward an all-printed thin-film transistor technology.
Keywords :
amorphous semiconductors; copper; elemental semiconductors; etching; printing; semiconductor device metallisation; silicon; thin film transistors; 200 degC; Cu; Si; back-channel etch; contact pads; inkjet printing; laser printed toner; photoresist-free fabrication process; process temperature; source/drain metallization; thin-film transistors; Amorphous silicon; Copper; Etching; Fabrication; Integrated circuit metallization; Organic materials; Printing; Semiconductor materials; Temperature; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE