• DocumentCode
    136093
  • Title

    Thermal processing for continued scaling of semiconductor devices

  • Author

    Sharma, Shantanu ; Aderhold, W. ; Raman Sharma, K. ; Mayur, A.J.

  • Author_Institution
    Silicon Syst. Group, Front End Products, Appl. Mater. Inc., Sunnyvale, CA, USA
  • fYear
    2014
  • fDate
    June 26 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Scaling of semiconductor devices over past decades has been made possible by continuous innovations in materials engineering as well as device integration and geometries. Thermal processing has been an enabler for manufacturing advanced devices, both as a unit process and in concert with other key technologies like ion implantation, epitaxy, and film deposition. This paper reviews the evolution of annealing technology with a special consideration to thermodynamics, kinetics and integration thermal budgets. Equipment and process innovations to meet ever-changing material and device fabrication requirements are presented.
  • Keywords
    MOSFET; annealing; thermal engineering; MOSFET; annealing technology; device fabrication; device integration; epitaxy; film deposition; integration thermal budgets; ion implantation; kinetics; materials engineering; semiconductor device continued scaling; thermal processing; thermodynamics; Annealing; Conductivity; Junctions; Logic gates; Materials; Performance evaluation; Silicides; Annealing; Device Integration; Laser Anneal; MOSFET; Millisecond;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology (IIT), 2014 20th International Conference on
  • Conference_Location
    Portland, OR
  • Type

    conf

  • DOI
    10.1109/IIT.2014.6939954
  • Filename
    6939954