Title :
Damage engineered Se implant for NMOS TiSix contact resistivity reduction
Author :
Rao, K.V. ; Khaja, F.A. ; Ni, C.N. ; Sharma, Shantanu ; Zheng, Bao ; Ramalingam, J. ; Gelatos, J. ; Lei, Jianjun ; Mayur, A. ; Hung, R. ; Banthia, V. ; Brand, A. ; Variam, N.
Author_Institution :
Varian Semicond. Equip., Appl. Mater., Inc., Gloucester, MA, USA
fDate :
June 26 2014-July 4 2014
Abstract :
Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.
Keywords :
CMOS integrated circuits; annealing; contact resistance; elemental semiconductors; ion implantation; phosphorus; selenium; silicon; titanium compounds; CMOS performance scaling; NMOS contact resistivity reduction; Se; Si:P; TiSix; damage engineered selenium implant; implant energy optimization; in-situ epitaxially doped n-SD regions; low specific contact resistivity; millisecond laser annealling; Annealing; Contacts; Implants; Metals; Silicides; Silicon; 14nm; CMOS; Contact Resistivity; Se Implant; Titanium Silicide; millisecond laser anneal; n-SD;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939955
