Title :
Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET´s
Author :
Majima, H. ; Ishikuro, H. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
The authors describe a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFET´s. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFET´s whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes account of quantum confinement in the silicon narrow channel, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.
Keywords :
MOSFET; silicon-on-insulator; 10 nm; SOI MOSFET; Si; Si narrow channel; quantum confinement; quantum mechanical narrow channel effect; room temperature; threshold voltage increase; ultra-narrow MOSFET; Electrodes; Impurities; MOSFET circuits; Potential well; Quantum mechanics; Resists; Silicon; Temperature; Threshold voltage; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
