Title :
Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium
Author :
Liu, J.B. ; Luo, JianChao ; Li, J.F. ; Chen, Ci ; Wang, G.L. ; Chen, T. ; Li, T.T. ; Zhong, Jin ; Wu, D.P. ; Xu, Peng ; Zhao, Chen
Author_Institution :
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
fDate :
June 26 2014-July 4 2014
Abstract :
The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).
Keywords :
annealing; carbon; elemental semiconductors; germanium; ion implantation; microwave materials processing; phosphorus; recrystallisation; secondary ion mass spectra; semiconductor junctions; C; Ge; MWA method; P; SIMS; TEM; amorphous layer recrystallization; carbon co-implantation; depth 34 nm; distributed carbon ions; electron volt energy 8 keV; ellipsometry; immobile clusters; microwave annealing; n-type germanium shallow junction; optimal carbon implantation energy; phosphorous shallow-junction formation; secondary ion mass spectroscopy; sheet resistance; transmission electron microscopy; trap vacancies; Carbon; Electrical resistance measurement; Germanium; Junctions; Microelectronics; Rapid thermal annealing; carbon; co-implantation; microwave annealing;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939956
