Scalability study of boron-based ULE implants for advanced CMOS technology

Author

Shu Qin ; Hu, Yongjun Jeff ; McTeer, Allen

Author_Institution

Micron Technol. Inc., Boise, ID, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

Conventional beam-line (BL) implant shows a poor scalability of profiles (x_j) versus energy at the ULE implant regime due to serious channeling effect and energy contamination issue. B₂H₆ PLAD shows intrinsic channeling effect immunity with a totally different mechanism. An in-situ, build-in B deposition layer is formed during PLAD process as a screen amorphous layer to minimize channeling effect and reduce the surface damage residues as well. For above reasons, B₂H₆ PLAD shows a good scalability of profiles (x_j) versus energy, and achieves better R_S-x_j characteristics and x_j abruptness, and then better device performance including lower series and contact resistances, better I_ON/I_OFF ratio and less short channel effect (SCE), etc. than BL implant counterparts.

Keywords

CMOS integrated circuits; boron; plasma immersion ion implantation; semiconductor doping; B; BL implant; PLAD process; SCE; advanced CMOS technology; beam-line implant; boron-based ULE implant scalability; contact resistances; device performance; energy contamination; in-situ build-in boron deposition layer; intrinsic channeling effect immunity; plasma doping; screen amorphous layer; short channel effect; surface damage residues; ultra-low energy implant; Annealing; Contamination; Doping; Implants; Junctions; Pollution measurement; Scalability; channeling effect; plasma doping (PLAD); ultra-low energy (ULE) implant; ultra-shallow junction (USJ);

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939959

Filename

6939959