Activation and defect dissolution of non-amorphizing, elevated temperature Si+ implants into In0.53Ga0.47As

A range of implant temperatures from 20 to 300C are studied for fixed 20 keV implant energy and 6E14 cm^-2 dose Si implants into In_0.53Ga_0.47As. Hall effect measurements performed on the samples after rapid thermal annealing reveal that Si implant activation is actually maximized for intermediate implant temperatures from 50-110C that are shown to be non-amorphizing. While these results echo the conclusion of previous studies that elevated temperature Si implants into In_0.53Ga_0.47As show increased activation over implants that are likely amorphizing, it is clear that there is a temperature window from 50-110C where activation is improved with increasing thermal budget for the dose and energy studied. Calculated Si solubilities of up to 1.3E19 cm^-3 and sheet resistances as low as 26 ohm/sq are achieved for a 10 keV 5E14 cm^-2 Si implant performed at 80C after 750C 5s annealing.