• DocumentCode
    1361087
  • Title

    Study on overvoltage protection in HVDC LTT valve

  • Author

    Tanabe, Shigeru ; Kobayashi, Sumio ; Sampei, Masatoshi

  • Author_Institution
    Toshiba Corp., Tokyo, Japan
  • Volume
    15
  • Issue
    2
  • fYear
    2000
  • fDate
    4/1/2000 12:00:00 AM
  • Firstpage
    545
  • Lastpage
    550
  • Abstract
    The light-triggered thyristor (LTT), which can be directly fired by light, does not need gate electronics on the high-voltage side and is thus a near-ideal semiconductor device for a HVDC valve. In providing overvoltage protection for an LTT without losing its advantage of simple circuits associated with the thyristor, the overvoltage protection system adopted in the conventional electrically triggered thyristor is not necessarily appropriate. The authors have shown that high-speed protective gate pulses generated from the valve base electronics together with the valve arrester are sufficient for the LTT valve overvoltage protection. The adequacy of this protection strategy is demonstrated by factory type tests and also excellent service experiences
  • Keywords
    HVDC power transmission; overvoltage protection; photothyristors; power semiconductor switches; HVDC LTT valve; high-speed protective gate pulses; light-triggered thyristor; overvoltage protection; protection strategy; semiconductor device; valve arrester; Arresters; Circuits; HVDC transmission; Production facilities; Protection; Pulse generation; Semiconductor devices; Thyristors; Valves; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Power Delivery, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8977
  • Type

    jour

  • DOI
    10.1109/61.852982
  • Filename
    852982