DocumentCode
1361094
Title
Minimization of wiring inductance in high power IGBT inverter
Author
Lounis, Z. ; Rasoanarivo, I. ; Davat, B.
Author_Institution
Groupe de Recherches en Electron. et Electrotech., Inst. Nat. Polytech. de Lorraine, France
Volume
15
Issue
2
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
551
Lastpage
555
Abstract
The wiring inductance is one of main causes limiting the use of the inverter in hard commutation mode, particularly when voltage, current and switching frequency are increased. The busbar technology is the means that allows one to reach low wiring inductance between DC source and power switches in spite of relatively long connections. This paper deals with studies of busbar structure applied to the high power inverters in order to improve their performances. Two structures of wiring are tested; the traditional one and busbar technology. Experimental and simulation results show that this last technique permits to obtain very low wiring inductance so that no snubber circuits are needed
Keywords
DC-AC power convertors; busbars; inductance; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; switching circuits; wiring; DC source; busbar technology; hard commutation mode; high-power IGBT inverter; performance improvement; power switches; switching frequency; wiring inductance minimisation; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Inverters; Minimization; Snubbers; Switching frequency; Voltage; Wiring;
fLanguage
English
Journal_Title
Power Delivery, IEEE Transactions on
Publisher
ieee
ISSN
0885-8977
Type
jour
DOI
10.1109/61.852983
Filename
852983
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