• DocumentCode
    1361094
  • Title

    Minimization of wiring inductance in high power IGBT inverter

  • Author

    Lounis, Z. ; Rasoanarivo, I. ; Davat, B.

  • Author_Institution
    Groupe de Recherches en Electron. et Electrotech., Inst. Nat. Polytech. de Lorraine, France
  • Volume
    15
  • Issue
    2
  • fYear
    2000
  • fDate
    4/1/2000 12:00:00 AM
  • Firstpage
    551
  • Lastpage
    555
  • Abstract
    The wiring inductance is one of main causes limiting the use of the inverter in hard commutation mode, particularly when voltage, current and switching frequency are increased. The busbar technology is the means that allows one to reach low wiring inductance between DC source and power switches in spite of relatively long connections. This paper deals with studies of busbar structure applied to the high power inverters in order to improve their performances. Two structures of wiring are tested; the traditional one and busbar technology. Experimental and simulation results show that this last technique permits to obtain very low wiring inductance so that no snubber circuits are needed
  • Keywords
    DC-AC power convertors; busbars; inductance; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; switching circuits; wiring; DC source; busbar technology; hard commutation mode; high-power IGBT inverter; performance improvement; power switches; switching frequency; wiring inductance minimisation; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Inverters; Minimization; Snubbers; Switching frequency; Voltage; Wiring;
  • fLanguage
    English
  • Journal_Title
    Power Delivery, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8977
  • Type

    jour

  • DOI
    10.1109/61.852983
  • Filename
    852983