Title :
Comparison of spot and wide beam implanters for making SOI wafers by layer transfer
Author :
Jost, Z. ; Jones, Andrew ; Lottes, C. ; Peidous, I. ; Ries, M. ; Usenko, A.
Author_Institution :
SunEdison Semicond., St. Peters, MO, USA
fDate :
June 26 2014-July 4 2014
Abstract :
The quality of silicon-on-insulator (SOI) wafers manufactured with either spot beam implanter or wide beam implanter are compared. The comparison shows similar quality wafers and a potential advantage of wide beam implanters in throughput.
Keywords :
ion implantation; silicon-on-insulator; SOI wafers; layer transfer; silicon-on-insulator wafers; spot beam implanter; wide beam implanters; Helium; Hydrogen; Implants; Silicon; Strain; Substrates; Temperature measurement; SOI; helium implantation; hydrogen ion implantation; layer transfer; spot beam; wide beam;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939973
