• DocumentCode
    136112
  • Title

    Comparison of spot and wide beam implanters for making SOI wafers by layer transfer

  • Author

    Jost, Z. ; Jones, Andrew ; Lottes, C. ; Peidous, I. ; Ries, M. ; Usenko, A.

  • Author_Institution
    SunEdison Semicond., St. Peters, MO, USA
  • fYear
    2014
  • fDate
    June 26 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The quality of silicon-on-insulator (SOI) wafers manufactured with either spot beam implanter or wide beam implanter are compared. The comparison shows similar quality wafers and a potential advantage of wide beam implanters in throughput.
  • Keywords
    ion implantation; silicon-on-insulator; SOI wafers; layer transfer; silicon-on-insulator wafers; spot beam implanter; wide beam implanters; Helium; Hydrogen; Implants; Silicon; Strain; Substrates; Temperature measurement; SOI; helium implantation; hydrogen ion implantation; layer transfer; spot beam; wide beam;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology (IIT), 2014 20th International Conference on
  • Conference_Location
    Portland, OR
  • Type

    conf

  • DOI
    10.1109/IIT.2014.6939973
  • Filename
    6939973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=136112