Study on the influence of implant dose rate and amorphization for advanced device characterization

Author

Chin, Y.L. ; Yang, Cary Y. ; Chiang, C.K. ; Chien, C.C. ; Yang, N.H. ; Lin, J.F. ; Li, Guolin ; Wu, J.Y. ; Felch, S.B. ; Bai, Xiaoqing ; Lin, W.C. ; Wan, Z.M.

Author_Institution

Adv. Technol. Dev. Div., United Microelectron. Corp., Tainan, Taiwan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

2

Abstract

Different dose rates of implant can lead to different amorphous layer thicknesses for amorphizing implants and may influence device performance. In addition, it has to be noticed that the batch type spot-beam was proved as divergent beam with large angle divergence which is different from single wafer spot beam and also takes into consideration by both bare wafer and also real device leanings. In the present study, the interaction between ion beam parameters related to beam scanning architectures (single-wafer spot and ribbon beams) and process results dependent on dose rate and amorphization effect will be evaluated for the effect on thickness of amorphous layer, damage, and electrical properties for advanced device.

Keywords

amorphisation; ion beams; ion implantation; amorphization effect; amorphous layer thickness; batch type spot-beam; implant dose rate; implantation damage; ion beam parameters; ribbon beam; single wafer spot beam; Carbon; Implants; Ion beams; Ion implantation; Performance evaluation; Shape; Threshold voltage; Amorphization; Dose Rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939975

Filename

6939975