DocumentCode :
136119
Title :
Sputtering and chemical modification of solid surfaces using oxygen ion beams
Author :
Takaoka, Gikan H. ; Ryuto, Hiromichi ; Takeuchi, Masaru ; Tsujinaka, Ryou
Author_Institution :
Photonics & Electron. Sci. & Eng. Center, Kyoto Univ., Kyoto, Japan
fYear :
2014
fDate :
June 26 2014-July 4 2014
Firstpage :
1
Lastpage :
4
Abstract :
Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.
Keywords :
ion beam effects; ion-surface impact; oxidation; silicon; sputtering; surface structure; O2; Si; acceleration voltage; chemical modification; monomer ion beams; oxidation; oxygen cluster ion beams; oxygen cluster ion irradiation; oxygen ion beams; oxygen monomer ion irradiation; polylactic acid; solid surfaces; sputtered depth; sputtering yield; Acceleration; Ion beams; Programmable logic arrays; Radiation effects; Rough surfaces; Surface roughness; Surface treatment; Implantation; Ion beam; Oxide formation; Oxygen cluster; Sputtering; Surface modification; Wettability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
Type :
conf
DOI :
10.1109/IIT.2014.6939980
Filename :
6939980
Link To Document :
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