Novel implantation mode application in FinFET structure

Author

Ger-Pin Lin ; Ching-I Li ; Po-Heng Lin ; Chih-Ming Tai ; Ruey-Dar Chang

Author_Institution

Adv. Ion Beam Technol., Inc., Tainan, Taiwan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

3

Abstract

Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called “FlexScan” that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.

Keywords

MOSFET; Monte Carlo methods; ion implantation; semiconductor doping; 3D device doping process; FinFET structure; FlexScan mode; Monte-Carlo simulation; SCE; conformal doping distribution profile; device leakage reduction; high-volume manufacturing; implantation mode application; multiple-gate FET; random doping distribution; short-channel effect; size 22 nm; Doping profiles; FinFETs; Implants; Monte Carlo methods; Performance evaluation; Three-dimensional displays; FinFET; Monte-Carlo simulation; conformal; ion implant;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939991

Filename

6939991