A plasma doping process for 3D finFET source/drain extensions

Author

Cuiyang Wang ; Shan Tang ; Keping Han ; Persing, H. ; Maynard, Helen ; Salimian, Siamak

Author_Institution

Silicon Syst. Group, Appl. Mater. Inc., Gloucester, MA, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.

Keywords

MOSFET; X-ray chemical analysis; annealing; arsenic; secondary ion mass spectroscopy; semiconductor doping; 3D finFET source-drain extensions; EDS line scan; SIMS; arsenic dopant distribution; conformal doping; cross-section transmission electron spectroscopy; energy dispersive X-ray spectroscopy mapping; plasma doping process; residual post-anneal damage; secondary ion mass spectroscopy; sidewall dopant distribution; Annealing; Doping; FinFETs; Plasmas; Silicon; Strips; Surface treatment; Arsenic; FinFET; Plasma doping; conformal;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939993

Filename

6939993