Title :
Efficient Monte Carlo simulation of ion implantation into 3D FinFET structure
Author :
Kubotera, Hiroyuki ; Kayama, Yasuyuki ; Nagura, Sachio ; Usami, Yasutsugu ; Schmidt, A. ; Kwon, Uihui ; Keun-Ho Lee ; Park, Yu-Seop
Author_Institution :
Semicond. R&D Center, Samsung Electron., Hwasung, South Korea
fDate :
June 26 2014-July 4 2014
Abstract :
Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.
Keywords :
MOSFET; Monte Carlo methods; doping profiles; ion implantation; technology CAD (electronics); 3D FinFET structure; FEP TCAD; Monte Carlo ion implantation simulator; Monte Carlo simulation; TAT reduction; advanced logic FEP simulation; advanced memory FEP simulation; front end process TCAD; improved statistical enhancement method; ion implantation; lateral doping profile noise; simulation accuracy target; simulation time fraction; turnaround time; FinFETs; Integrated circuit modeling; Ion implantation; Noise; Semiconductor process modeling; Three-dimensional displays; Trajectory; FinFET; Ion Implantation; Monte Carlo Simulation; Statistical Enhancement; Trajectory Splitting Method;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939999
