Title :
A Compact Model for Dual-Gate One-Dimensional FET: Application to Carbon-Nanotube FETs
Author :
Frégonése, Sébastien ; Maneux, Cristell ; Zimmer, Thomas
Author_Institution :
Lab. of the Integration from Mater. to Syst., Centre Nat. de la Rech. Sci., Talence, France
Abstract :
A compact model for dual-gate (DG) carbon-nanotube field-effect transistors (FETs) (CNTFETs) is presented. This compact model includes the most significant mechanisms present in DG CNTFETs such as the Schottky barrier at the metal-nanotube interface, charge and electrostatic modeling, the band-to-band tunneling effect, and quasi-ballistic transport through the Landauer equation. Also, the structure of our DG CNTFET model and its associated equations are versatile and can be used to model different kinds of 1-D ballistic DG FETs, such as graphene-nanoribbon-based devices. Furthermore, this compact model is compared with measurements from two different technologies. Finally, a simple ring oscillator circuit has been simulated using ten identical devices.
Keywords :
carbon nanotubes; field effect transistors; oscillators; 1D ballistic DG FET; CNTFET; DG carbon nanotube field effect transistors; Landauer equation; Schottky barrier; band-to-band tunneling effect; carbon nanotube FET; dual-gate one-dimensional FET; electrostatic modeling; graphene-nanoribbon-based devices; metal-nanotube interface; quasiballistic transport; ring oscillator circuit; CNTFETs; Capacitance; Computational modeling; Electric potential; Integrated circuit modeling; Logic gates; Mathematical model; Carbon nanotube (CNT); circuit; compact modeling; dual gate (DG); graphene; nanoribbon; transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2082548
