Title :
A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET´s with sub-2 nm gate oxides
Author :
Yang, Nian ; Henson, W. Kirklen ; Wortman, Jimmie J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
8/1/2000 12:00:00 AM
Abstract :
This work examines different components of leakage current in scaled n-MOSFET´s with ultrathin gate oxides (1.4-2.0 nm). Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and off-state drain currents
Keywords :
MOSFET; dielectric thin films; leakage currents; semiconductor device models; tunnelling; 1.4 to 2 nm; GIDL; NMOSFET; drain current; drain extension; drain leakage currents; gate direct tunneling currents; gate overlap regions; offstate drain currents; scaled n-MOSFET; source extension; theoretical modeling; ultrathin gate oxides; Energy consumption; Leakage current; MOS capacitors; MOS devices; MOSFET circuits; Quantum mechanics; Rapid thermal processing; Silicon compounds; Substrates; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
