A new trench base-shielded bipolar transistor

Author

Chen, Qufei ; You, Budong ; Huang, Alex Q. ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1662

Lastpage

1666

Abstract

In this paper, a new power bipolar transistor structure called the trench base-shielded bipolar transistor (TBSBT) Is proposed and experimentally demonstrated. This structure incorporates deep p⁺ poly-Si trenches into the base of a conventional bipolar transistor. With the base shielded effectively by the p⁺ trenches, the base of the TBSBT can be made very narrow to achieve high current gain h_FE and high cut-off frequency f_T without compromising on the breakdown voltage. Experimental results show that the on-state anti switching characteristics of the TBSBT are significantly better than those of the existing power bipolar transistors

Keywords

etching; power bipolar transistors; semiconductor device breakdown; silicon; Si; breakdown voltage; deep p⁺ poly-Si trenches; high current gain; high cutoff frequency; onstate anti switching characteristics; polysilicon trenches; power bipolar transistors; trench base-shielded bipolar transistor; Bipolar transistors; Cutoff frequency; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Power electronics; Power semiconductor switches; Power transistors; Silicon compounds; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853045

Filename

853045