Title :
High throughput ion implanter for environmentally beneficial products with III–V compound semiconductor
Author :
Matsumoto, Tad ; Onoda, Mitsuyoshi ; Orihira, Kohich ; Tatemichi, Junichi ; Guiot, Eric ; Petit, Olivier ; Courrenq, Thibaut
Author_Institution :
FPD Machine Bus. Center, Nissin Ion Equip. Co., Ltd., Koka, Japan
fDate :
June 26 2014-July 4 2014
Abstract :
We have developed an ultra-high current ion implantation system for high throughput wafer processing. The ion source is designed based on implanters used in the flat panel display industry to produce 80 cm high beams which exceed 80 mA. Multiple wafers are processed at a time with the large-sized beam. The implantation tool exhibited throughput of 107 and 38 wafers per hour for 1E16 and 1E17 ions/cm2, respectively. Successful InP layer transfer with smooth surface was demonstrated using Smart Cut™ technology.
Keywords :
III-V semiconductors; indium compounds; ion implantation; semiconductor doping; III-V compound semiconductor; InP; InP layer transfer; Smart Cut technology; flat panel display industry; high throughput ion implanter; high throughput wafer processing; ion source; large-sized beam; multiple wafers; size 80 cm; smooth surface; ultrahigh current ion implantation system; Indium phosphide; Industries; Ion sources; Particle beams; Plasmas; Throughput; GaN; High current; InP; Ion implantation; Smart Cut;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940024
