High throughput ion implanter for environmentally beneficial products with III–V compound semiconductor

Author

Matsumoto, Tad ; Onoda, Mitsuyoshi ; Orihira, Kohich ; Tatemichi, Junichi ; Guiot, Eric ; Petit, Olivier ; Courrenq, Thibaut

Author_Institution

FPD Machine Bus. Center, Nissin Ion Equip. Co., Ltd., Koka, Japan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

We have developed an ultra-high current ion implantation system for high throughput wafer processing. The ion source is designed based on implanters used in the flat panel display industry to produce 80 cm high beams which exceed 80 mA. Multiple wafers are processed at a time with the large-sized beam. The implantation tool exhibited throughput of 107 and 38 wafers per hour for 1E16 and 1E17 ions/cm², respectively. Successful InP layer transfer with smooth surface was demonstrated using Smart Cut™ technology.

Keywords

III-V semiconductors; indium compounds; ion implantation; semiconductor doping; III-V compound semiconductor; InP; InP layer transfer; Smart Cut technology; flat panel display industry; high throughput ion implanter; high throughput wafer processing; ion source; large-sized beam; multiple wafers; size 80 cm; smooth surface; ultrahigh current ion implantation system; Indium phosphide; Industries; Ion sources; Particle beams; Plasmas; Throughput; GaN; High current; InP; Ion implantation; Smart Cut;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940024

Filename

6940024