• DocumentCode
    1361654
  • Title

    Solid state: Fast electron-beam lithography: High blanking speeds may make this new system a serious challenger in producing submicrometer ICs

  • Author

    Eidson, John C.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, CA, USA
  • Volume
    18
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    24
  • Lastpage
    28
  • Abstract
    Electron-beam lithography may become competitive with optical methods for making integrated circuits. The step that could make this possible is an electron-beam lithography system developed at Hewlett-Packard that is potentially many times faster than previous machines for making ICs through direct writing on wafers or generating high-precision masks. The Hewlett-Packard system has a beam spot-corresponding to the smallest pixel that can be written-with a diameter that can be varied from 0.5 to 0.25 μm.
  • Keywords
    electron beam lithography; integrated circuit manufacture; 300 MHz blanking rate; beam spot; electron-beam lithography system; integrated circuits; Blanking; Electron beams; Lenses; Lithography; Resists; Substrates; Throughput;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1981.6369754
  • Filename
    6369754