Title :
VIISta 900 3D: Advanced medium current implanter
Author :
Sinclair, Frank ; Olson, Joe ; Rodier, Dennis ; Eidukonis, Alex ; Thanigaivelan, T. ; Todorov, Stan
Author_Institution :
Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
fDate :
June 26 2014-July 4 2014
Abstract :
The continued advance of semiconductor technology, including the emergence of 3D device architectures, demands ever-increasing precision of dose and angle control in ion implantation. The Varian Semiconductor Equipment business unit of Applied Materials has enhanced the design of the industry´s leading medium current implanter to meet the production requirements of advanced technology nodes. Improvements to the implanter architecture include more precise angle control, increased beam utilization, better uniformity and repeatability and longer maintenance intervals. Advanced ion optics allow measurement and control of beam shape.
Keywords :
ion implantation; 3D device architectures; VIISta 900 3D; advanced medium current implanter; advanced technology nodes; applied materials; beam shape control; beam utilization; implanter architecture; ion implantation; precise angle control; semiconductor technology; varian semiconductor equipment business unit; Current measurement; Implants; Insulators; Magnetic flux; Magnetic separation; Particle beams; Three-dimensional displays; Dose Control; Implant Angles; Precision;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940037
