DocumentCode
1361797
Title
A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an
of 57 dBm
Author
Huang, Cong ; Zampardi, Peter J. ; Buisman, Koen ; Cismaru, Cristian ; Sun, Mike ; Stevens, Kevin ; Fu, Jianli ; Marchetti, Mauro ; De Vreede, Leo C N
Author_Institution
Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands
Volume
31
Issue
2
fYear
2010
Firstpage
108
Lastpage
110
Abstract
In this letter, a junction varactor is presented with a large capacitance tuning range, while providing very high linearity. Such varactors are extremely useful in adaptive RF applications, which directly benefit from passive components with high tuning range and high linearity. Using a preproduction GaAs process technology and third-order intermodulation (IM 3) cancellation techniques, a very linear device is created with a capacitance tuning range as large as 9 : 1 over a control voltage range from 0 to 15 V. Its third-order output intercept point is 57 dBm; the average quality factor is ~ 50, and the breakdown voltage is 28 V. These measured results represent the current state-of-the-art in tuning range, linearity, and quality factor among all existing continuously tunable elements.
Keywords
III-V semiconductors; gallium arsenide; intermodulation; radiocommunication; tuning; varactors; GaAs; adaptive RF applications; junction varactor; large capacitance tuning range; passive components; third-order intermodulation cancellation; voltage 0 V to 15 V; voltage 28 V; $Q$ factor; Adaptive systems; gallium compounds; linear circuits; tunable circuits and devices; varactors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2037528
Filename
5357396
Link To Document