DocumentCode :
1361804
Title :
Frequency Effect on Voltage Linearity of  \\hbox {ZrO}_{2} -Based RF Metal–Insulator–Metal Capacitors
Author :
Bertaud, Thomas ; Blonkowski, Serge ; Bermond, Cedric ; Vallee, Christophe ; Gonon, Patrice ; Gros-Jean, Michael ; Flechet, Bernard
Author_Institution :
IMEP-LAHC, Univ. de Savoie, Le Bourget du Lac, France
Volume :
31
Issue :
2
fYear :
2010
Firstpage :
114
Lastpage :
116
Abstract :
This letter deals with the electrical and wideband frequency characterizations of metal-insulator-metal capacitors integrating medium-?? material, ZrO2. In particular, this letter focuses on the frequency effect on the voltage linearity of these capacitors and material. The dependence of the voltage-capacitance coefficient (VCC) ?? is, for the first time, studied from 1 kHz to 1 GHz. Intrinsic or extrinsic material origin of the VCC are discussed.
Keywords :
MIM devices; capacitors; high-k dielectric thin films; zirconium compounds; RF metal-insulator-metal capacitors; electrical frequency characterizations; frequency 1 kHz to 1 GHz; frequency effect; medium-?? material; voltage linearity; voltage-capacitance coefficient; wideband frequency characterizations; Dielectric materials; metal–insulator–metal (MIM) devices; microwave measurement; zirconium;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2036275
Filename :
5357397
Link To Document :
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